深圳市瑞展科技有限公司

108MHz 150W 50V

FEATURES

· High power gain

· Low intermodulation distortion

· Easy power control

· Good thermal stability

· Withstands full load mismatch.

DESCRIPTION

Silicon N-channel enhancement

mode vertical D-MOS transistor

designed for industrial and military

applications in the HF/VHF frequency

range.

The transistor is encapsulated in a

4-lead, SOT121 flange envelope, with

a ceramic cap. All leads are isolated

from the flange.

A marking code, showing gate-source

voltage (VGS) information is provided

for matched pair applications. Refer

to the 'General' section for further

information.